IPB019N08N3GATMA1 vs IRFB3207ZPBF Vergleich

Detaillierter Direktvergleich von IPB019N08N3GATMA1 von Infineon und IRFB3207ZPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPB019N08N3GATMA1 IRFB3207ZPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,74 $1,62
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Series OptiMOS 3 HEXFET
FET Type N-Channel —
Technology MOSFET (Metal Oxide) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-to-Source Voltage (Vdss) 80 V —
Continuous Drain Current (Id) @ Tc=25°C 180 A —
Power Dissipation (Pd) @ Tc=25°C 300 W —
On-Resistance RDS(on) Max @ VGS=10V 1.9 mΩ —
Gate Threshold Voltage (Vgs(th)) 3.5 V —
Drive Voltage (Rds On Max) 6 V, 10 V —
Total Gate Charge (Qg) @ VGS=10V 206 nC —
Input Capacitance (Ciss) 14.2 nF —
Output Capacitance (Coss) 3.84 nF —
Reverse Transfer Capacitance (Crss) 3.84 nF —
Betriebstemperaturbereich -55 °C to +175 °C —
Gehäuse PG-TO263-7 (D2PAK-6, surface mount) TO-220AB (3-lead through-hole)
Montageart Surface Mount Through Hole
RoHS-Status Compliant —
Part Number — IRFB3207ZPBF
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Betriebs-Sperrschichttemperatur — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
MSL-Level — N/A (through-hole)
Avalanche Rated — Yes (improved Z-variant ruggedness)

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