IPB019N08N3GATMA1 vs IRFB3207ZPBF 비교

다음의 상세 나란히 비교: IPB019N08N3GATMA1 제조: Infineon 및 IRFB3207ZPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IPB019N08N3GATMA1 IRFB3207ZPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.74 $1.62
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Series OptiMOS 3 HEXFET
FET Type N-Channel —
Technology MOSFET (Metal Oxide) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-to-Source Voltage (Vdss) 80 V —
Continuous Drain Current (Id) @ Tc=25°C 180 A —
Power Dissipation (Pd) @ Tc=25°C 300 W —
On-Resistance RDS(on) Max @ VGS=10V 1.9 mΩ —
Gate Threshold Voltage (Vgs(th)) 3.5 V —
Drive Voltage (Rds On Max) 6 V, 10 V —
Total Gate Charge (Qg) @ VGS=10V 206 nC —
Input Capacitance (Ciss) 14.2 nF —
Output Capacitance (Coss) 3.84 nF —
Reverse Transfer Capacitance (Crss) 3.84 nF —
동작 온도 범위 -55 °C to +175 °C —
패키지 PG-TO263-7 (D2PAK-6, surface mount) TO-220AB (3-lead through-hole)
실장 유형 Surface Mount Through Hole
RoHS 상태 Compliant —
Part Number — IRFB3207ZPBF
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
동작 접합 온도 — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
MSL 레벨 — N/A (through-hole)
Avalanche Rated — Yes (improved Z-variant ruggedness)

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