IPB019N08N3GATMA1 vs IRFB3207ZPBF 比較
詳細な並列比較: IPB019N08N3GATMA1 メーカー: Infineon および IRFB3207ZPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPB019N08N3GATMA1 | IRFB3207ZPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.74 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Series | OptiMOS 3 | HEXFET |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-to-Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 180 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 300 W | — |
| On-Resistance RDS(on) Max @ VGS=10V | 1.9 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V | — |
| Drive Voltage (Rds On Max) | 6 V, 10 V | — |
| Total Gate Charge (Qg) @ VGS=10V | 206 nC | — |
| Input Capacitance (Ciss) | 14.2 nF | — |
| Output Capacitance (Coss) | 3.84 nF | — |
| Reverse Transfer Capacitance (Crss) | 3.84 nF | — |
| 動作温度範囲 | -55 °C to +175 °C | — |
| パッケージ | PG-TO263-7 (D2PAK-6, surface mount) | TO-220AB (3-lead through-hole) |
| 実装タイプ | Surface Mount | Through Hole |
| RoHS ステータス | Compliant | — |
| Part Number | — | IRFB3207ZPBF |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| 動作接合温度 | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| MSLレベル | — | N/A (through-hole) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |