IPB019N08N3GATMA1 vs IRFB3207ZPBF Comparison
Detailed side-by-side comparison of IPB019N08N3GATMA1 by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB019N08N3GATMA1 - 80V 180A 1.9mΞ© OptiMOS 3 N-MOSFET | Infineon
IPB019N08N3GATMA1 β Active
Specification Comparison
| Parameter | IPB019N08N3GATMA1 | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.74 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Series | OptiMOS 3 | HEXFET |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-to-Source Voltage (Vdss) | 80 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 180 A | β |
| Power Dissipation (Pd) @ Tc=25Β°C | 300 W | β |
| On-Resistance RDS(on) Max @ VGS=10V | 1.9 mΞ© | β |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V | β |
| Drive Voltage (Rds On Max) | 6 V, 10 V | β |
| Total Gate Charge (Qg) @ VGS=10V | 206 nC | β |
| Input Capacitance (Ciss) | 14.2 nF | β |
| Output Capacitance (Coss) | 3.84 nF | β |
| Reverse Transfer Capacitance (Crss) | 3.84 nF | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Package | PG-TO263-7 (D2PAK-6, surface mount) | TO-220AB (3-lead through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| RoHS Status | Compliant | β |
| Part Number | β | IRFB3207ZPBF |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at TC=25C | β | 120 A |
| Silicon-Limited Drain Current | β | 170 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | β | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | β | 300 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free) |
| MSL Level | β | N/A (through-hole) |
| Avalanche Rated | β | Yes (improved Z-variant ruggedness) |