IPB110P06LMATMA1 vs IRF1018EPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB110P06LMATMA1 disebabkan oleh Infineon dan IRF1018EPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPB110P06LMATMA1 | IRF1018EPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | N-Channel |
| Technology | OptiMOS (trench MOSFET) | HEXFET (Power MOSFET) |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TC=25C | -100 A | — |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | — |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | — |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | — |
| Gate-Source Voltage (VGS max) | +/-20 V | — |
| Gambaran Suhu Operasi | -55 C to +175 C (TJ) | -55 C to +175 C (Tj) |
| Kemasan / Case | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | — |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Supplier Device Package | PG-TO263-3-2 | — |
| Gate Drive Level | Logic-level compatible | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25C | — | 79 A |
| Rds(on) max at Vgs=10V | — | 8.4 mOhm |
| Total Gate Charge (Qg) | — | 46 nC |
| Gate Drive Voltage (Vgs) | — | 10 V (optimized; +/-20 V max) |
| Power Dissipation (Pd) at Tc=25C | — | 110 W |
| Kemasan | — | TO-220AB (through-hole, 3-lead) |
| Qualification | — | JEDEC (Industrial market) |
| Lead-Free (PBF suffix) | — | Yes |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |