IPC100N04S5L1R1ATMA1 vs ISC011N04NM7VATMA1 Vergleich
Detaillierter Direktvergleich von IPC100N04S5L1R1ATMA1 von Infineon und ISC011N04NM7VATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon
IPC100N04S5L1R1ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPC100N04S5L1R1ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,86 | $0,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | OptiMOS 7 Power-Transistor |
| Transistortyp | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC | 100 A | 256 A |
| On-Resistance RDS(on) max | 1.1 mΩ | — |
| Power Dissipation (PD) at TC | 150 W | — |
| Gate Threshold Voltage VGS(th) | Logic Level | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55 °C to +175 °C (TJ) |
| Gehäuse | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8 (source-down) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (unlimited floor life, 260 °C peak reflow) | MSL 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS Compliance | Green Product (RoHS compliant) | Compliant (per Infineon product page) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Technology | — | Trench MOSFET, silicon |
| Short-Circuit Withstand | — | Yes (current-limited) |