IPC100N04S5L1R1ATMA1 vs ISC011N04NM7VATMA1 Comparison

Detailed side-by-side comparison of IPC100N04S5L1R1ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPC100N04S5L1R1ATMA1

IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon

IPC100N04S5L1R1ATMA1 βœ“ Active
Infineon
ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active

Specification Comparison

Parameter IPC100N04S5L1R1ATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.86 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 40 V OptiMOS 7 Power-Transistor
Transistor Type N-Channel Enhancement Mode β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TC 100 A 256 A
On-Resistance RDS(on) max 1.1 mΞ© β€”
Power Dissipation (PD) at TC 150 W β€”
Gate Threshold Voltage VGS(th) Logic Level β€”
Operating Temperature Range -55 Β°C to +175 Β°C -55 Β°C to +175 Β°C (TJ)
Package PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8 (source-down)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (unlimited floor life, 260 Β°C peak reflow) MSL 1 (per JEDEC J-STD-020)
Automotive Qualification AEC-Q101 qualified β€”
Avalanche Tested 100% avalanche tested β€”
RoHS Compliance Green Product (RoHS compliant) Compliant (per Infineon product page)
FET Type β€” N-Channel
Continuous Drain Current (ID) at TA=25Β°C β€” 38 A
On-Resistance RDS(on) max @ VGS=10V β€” 1.1 mΞ©
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 136 W
Gate Threshold Voltage (Vth) β€” Up to 3.2 V
Technology β€” Trench MOSFET, silicon
Short-Circuit Withstand β€” Yes (current-limited)

Datasheets & Resources

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