IPC100N04S5L1R5ATMA1 vs IAUA120N04S5N014AUMA1 Vergleich
Detaillierter Direktvergleich von IPC100N04S5L1R5ATMA1 von Infineon und IAUA120N04S5N014AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon
IAUA120N04S5N014AUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPC100N04S5L1R5ATMA1 | IAUA120N04S5N014AUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $2,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | — |
| Polarity / Channel Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) Max | 40 V | — |
| Gate-Source Voltage (VGS) Max | 20 V | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation (PD) at Tc=25C | 115 W | — |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | — |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Betriebstemperaturbereich | -55C to +175C | -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet] |
| Gehäuse | PG-TDSON-8-34 (SS08 leadless) | PG-HSOF-5-2 (sTOLL) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (260C peak reflow) | [DATA_NEEDED: MSL rating] |
| AEC-Q101 Qualified | Yes | — |
| RoHS-Status | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | — |
| Part Number | — | IAUA120N04S5N014AUMA1 |
| Series | — | OptiMOS™ 5 |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C | — | 120 A |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V | — | 1.4 mΩ |
| Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C | — | 136 W |
| Pin-Anzahl | — | 5 + Tab (6 effective) |
| Gate Drive | — | Enhancement Mode |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Rated | — | Yes (100% avalanche tested) |