IPC50N04S55R8ATMA1 vs IPC100N04S51R7ATMA1 Vergleich

Detaillierter Direktvergleich von IPC50N04S55R8ATMA1 von Infineon und IPC100N04S51R7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPC50N04S55R8ATMA1 IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon

IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon

IPC50N04S55R8ATMA1 ✓ Aktiv
Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IPC50N04S55R8ATMA1 IPC100N04S51R7ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,61 $0,82
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) at Tc 50 A —
Power Dissipation (P_D) at Tc 42 W —
R_DS(on) Max (V_GS=10V) 5.8 mΩ —
Output Capacitance (C_oss) 305 pF —
Gate Threshold (V_GS(th)) [DATA_NEEDED: V_GS(th)] —
Betriebstemperaturbereich -55 °C to +175 °C —
Gehäuse PG-TDSON-8-33 (TDSON EP) PG-TDSON-8-34 (SS08 leadless)
Montageart Surface Mount Surface Mount
MSL-Level MSL1 (260 °C peak reflow) MSL1 (260 °C peak reflow)
Automotive Qualification AEC-Q101 —
Avalanche Rating 100% Avalanche Tested —
RoHS / Green RoHS compliant, Green Product —
Polarity Enhancement Mode —
Manufacturer — Infineon Technologies
Series — OptiMOS-5
Transistortyp — N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage VDS — 40 V
Continuous Drain Current ID — 100 A (at TC)
Pulsed Drain Current IDM — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage VGS — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) value]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation PD — 115 W (at TC)
Thermal Resistance RthJC — 1.3 K/W
Betriebs-Sperrschichttemperatur — -55 °C to +175 °C
AEC-Q101 Qualified — Yes
Avalanche Tested — 100% tested
RoHS-Status — Compliant (Green Product)
Built-in Body Diode — Yes

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