IPC50N04S55R8ATMA1 vs IPC100N04S51R7ATMA1 Comparison
Detailed side-by-side comparison of IPC50N04S55R8ATMA1 by Infineon and IPC100N04S51R7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC50N04S55R8ATMA1
IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon
IPC50N04S55R8ATMA1 β ActiveInfineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β ActiveSpecification Comparison
| Parameter | IPC50N04S55R8ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.82 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench MOSFET) | β |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D) at Tc | 50 A | β |
| Power Dissipation (P_D) at Tc | 42 W | β |
| R_DS(on) Max (V_GS=10V) | 5.8 mΞ© | β |
| Output Capacitance (C_oss) | 305 pF | β |
| Gate Threshold (V_GS(th)) | [DATA_NEEDED: V_GS(th)] | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-33 (TDSON EP) | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260 Β°C peak reflow) | MSL1 (260 Β°C peak reflow) |
| Automotive Qualification | AEC-Q101 | β |
| Avalanche Rating | 100% Avalanche Tested | β |
| RoHS / Green | RoHS compliant, Green Product | β |
| Polarity | Enhancement Mode | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS-5 |
| Transistor Type | β | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | β | 40 V |
| Continuous Drain Current ID | β | 100 A (at TC) |
| Pulsed Drain Current IDM | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | β | 115 W (at TC) |
| Thermal Resistance RthJC | β | 1.3 K/W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| AEC-Q101 Qualified | β | Yes |
| Avalanche Tested | β | 100% tested |
| RoHS Status | β | Compliant (Green Product) |
| Built-in Body Diode | β | Yes |