IPC50N04S55R8ATMA1 vs IPC100N04S51R7ATMA1 Comparaison
Comparaison détaillée côte à côte de IPC50N04S55R8ATMA1 par Infineon et IPC100N04S51R7ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPC50N04S55R8ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,61 | $0,82 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) at Tc | 50 A | — |
| Power Dissipation (P_D) at Tc | 42 W | — |
| R_DS(on) Max (V_GS=10V) | 5.8 mΩ | — |
| Output Capacitance (C_oss) | 305 pF | — |
| Gate Threshold (V_GS(th)) | [DATA_NEEDED: V_GS(th)] | — |
| Plage de température de fonctionnement | -55 °C to +175 °C | — |
| Boîtier | PG-TDSON-8-33 (TDSON EP) | PG-TDSON-8-34 (SS08 leadless) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL1 (260 °C peak reflow) | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS / Green | RoHS compliant, Green Product | — |
| Polarity | Enhancement Mode | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| Type de transistor | — | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| Température de jonction en fonctionnement | — | -55 °C to +175 °C |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% tested |
| Statut RoHS | — | Compliant (Green Product) |
| Built-in Body Diode | — | Yes |