IPC50N04S55R8ATMA1 vs IPC70N04S5L4R2ATMA1 Vergleich
Detaillierter Direktvergleich von IPC50N04S55R8ATMA1 von Infineon und IPC70N04S5L4R2ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPC50N04S55R8ATMA1 | IPC70N04S5L4R2ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,61 | $0,78 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (trench MOSFET) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) at Tc | 50 A | — |
| Power Dissipation (P_D) at Tc | 42 W | — |
| R_DS(on) Max (V_GS=10V) | 5.8 mΩ | — |
| Output Capacitance (C_oss) | 305 pF | — |
| Gate Threshold (V_GS(th)) | [DATA_NEEDED: V_GS(th)] | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | — |
| Gehäuse | PG-TDSON-8-33 (TDSON EP) | PG-TDSON-8-34 (Surface Mount) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (260 °C peak reflow) | MSL1 (up to 260°C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS / Green | RoHS compliant, Green Product | — |
| Polarity | Enhancement Mode | — |
| Drain to Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 70 A |
| Power Dissipation (Pd) @ Tc=25°C | — | 50 W |
| R_DS(on) Max @ Vgs=10V | — | 4.2 mΩ (typ) |
| Gate Threshold (Vgs(th)) | — | Logic Level (4.5 V max Rds On, Min Rds On) |
| Drive Voltage (Max Rds On, Min Rds On) | — | 4.5 V |
| Operating Temperature (Tj) | — | -55°C to +175°C |
| Avalanche Tested | — | 100% (60 A production test) |
| RoHS-Status | — | Compliant (Green Product) |
| Configuration | — | Single with Built-in Diode |
| Case Connection | — | DRAIN |