IPC50N04S55R8ATMA1 vs IPC70N04S5L4R2ATMA1 对比

详细并排对比 IPC50N04S55R8ATMA1 出自 Infineon 和 IPC70N04S5L4R2ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPC50N04S55R8ATMA1 IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon

IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon

IPC50N04S55R8ATMA1 ✓ 量产中
Infineon
IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 ✓ 量产中

规格对比

参数 IPC50N04S55R8ATMA1 IPC70N04S5L4R2ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.61 $0.78
FET Type N-Channel N-Channel
Technology OptiMOS 5 (trench MOSFET) MOSFET (Metal Oxide)
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) at Tc 50 A —
Power Dissipation (P_D) at Tc 42 W —
R_DS(on) Max (V_GS=10V) 5.8 mΩ —
Output Capacitance (C_oss) 305 pF —
Gate Threshold (V_GS(th)) [DATA_NEEDED: V_GS(th)] —
工作温度范围 -55 °C to +175 °C —
封装 PG-TDSON-8-33 (TDSON EP) PG-TDSON-8-34 (Surface Mount)
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (260 °C peak reflow) MSL1 (up to 260°C peak reflow)
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Rating 100% Avalanche Tested —
RoHS / Green RoHS compliant, Green Product —
Polarity Enhancement Mode —
Drain to Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ Tc=25°C — 70 A
Power Dissipation (Pd) @ Tc=25°C — 50 W
R_DS(on) Max @ Vgs=10V — 4.2 mΩ (typ)
Gate Threshold (Vgs(th)) — Logic Level (4.5 V max Rds On, Min Rds On)
Drive Voltage (Max Rds On, Min Rds On) — 4.5 V
Operating Temperature (Tj) — -55°C to +175°C
Avalanche Tested — 100% (60 A production test)
RoHS 状态 — Compliant (Green Product)
Configuration — Single with Built-in Diode
Case Connection — DRAIN

数据手册与资源

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