IPD30N06S215ATMA2 vs IPD90N06S404ATMA2 Vergleich
Detaillierter Direktvergleich von IPD30N06S215ATMA2 von Infineon und IPD90N06S404ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD30N06S215ATMA2 | IPD90N06S404ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,36 | $0,72 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS Power MOSFET | — |
| Transistortyp | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 55 V | 60 V |
| Continuous Drain Current (ID, Tc) | 30 A | 90 A |
| Power Dissipation (PD, Tc) | 136 W | 150 W |
| Gehäuse / Bauform | PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55 C to +175 C (junction) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| MSL-Level | MSL1 (up to 260 C peak reflow) | MSL1 |
| Avalanche Tested | 100% avalanche tested | — |
| Lead-Free / RoHS | Green package (lead free), RoHS compliant | — |
| Gate Threshold Type | Logic-level compatible | — |
| Packing | Tape & Reel (T/R) | — |
| FET Type | — | N-Channel, Enhancement Mode |
| On-Resistance (RDS(on)) | — | 3.8 mΩ (typ) at VGS = 10 V |
| Gehäuse | — | PG-TO252-3-11 (DPAK), 3-pin surface mount |
| Operating Temperature (TJ max) | — | 175 °C |
| Peak Reflow Temperature | — | 260 °C (MSL1) |
| Avalanche Rating | — | 100% Avalanche Tested |
| Technology | — | OptiMOS |
| RoHS-Status | — | Compliant (Green Product) |
| Polarity | — | Single N-Channel |