IPD30N06S215ATMA2 vs IPD90N06S404ATMA2 对比

详细并排对比 IPD30N06S215ATMA2 出自 Infineon 和 IPD90N06S404ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD30N06S215ATMA2 IPD30N06S215ATMA2 - 55V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N06S215ATMA2 - 55V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N06S215ATMA2 ✓ 量产中
Infineon
IPD90N06S404ATMA2 IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 ✓ 量产中

规格对比

参数 IPD30N06S215ATMA2 IPD90N06S404ATMA2
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.36 $0.72
Manufacturer Infineon Technologies —
Part Family OptiMOS Power MOSFET —
晶体管类型 N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 55 V 60 V
Continuous Drain Current (ID, Tc) 30 A 90 A
Power Dissipation (PD, Tc) 136 W 150 W
封装 / 外壳 PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) —
安装类型 Surface Mount Surface Mount
工作温度 -55 C to +175 C (junction) —
Automotive Qualification AEC-Q101 qualified AEC-Q101
MSL 等级 MSL1 (up to 260 C peak reflow) MSL1
Avalanche Tested 100% avalanche tested —
Lead-Free / RoHS Green package (lead free), RoHS compliant —
Gate Threshold Type Logic-level compatible —
Packing Tape & Reel (T/R) —
FET Type — N-Channel, Enhancement Mode
On-Resistance (RDS(on)) — 3.8 mΩ (typ) at VGS = 10 V
封装 — PG-TO252-3-11 (DPAK), 3-pin surface mount
Operating Temperature (TJ max) — 175 °C
Peak Reflow Temperature — 260 °C (MSL1)
Avalanche Rating — 100% Avalanche Tested
Technology — OptiMOS
RoHS 状态 — Compliant (Green Product)
Polarity — Single N-Channel

数据手册与资源

浏览全部产品 创建 BOM 获取报价