IPD30N06S215ATMA2 vs IPD90N06S404ATMA2 Comparison
Detailed side-by-side comparison of IPD30N06S215ATMA2 by Infineon and IPD90N06S404ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD30N06S215ATMA2 | IPD90N06S404ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.72 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS Power MOSFET | β |
| Transistor Type | N-Channel Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 55 V | 60 V |
| Continuous Drain Current (ID, Tc) | 30 A | 90 A |
| Power Dissipation (PD, Tc) | 136 W | 150 W |
| Package / Case | PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +175 C (junction) | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| MSL Level | MSL1 (up to 260 C peak reflow) | MSL1 |
| Avalanche Tested | 100% avalanche tested | β |
| Lead-Free / RoHS | Green package (lead free), RoHS compliant | β |
| Gate Threshold Type | Logic-level compatible | β |
| Packing | Tape & Reel (T/R) | β |
| FET Type | β | N-Channel, Enhancement Mode |
| On-Resistance (RDS(on)) | β | 3.8 mΞ© (typ) at VGS = 10 V |
| Package | β | PG-TO252-3-11 (DPAK), 3-pin surface mount |
| Operating Temperature (TJ max) | β | 175 Β°C |
| Peak Reflow Temperature | β | 260 Β°C (MSL1) |
| Avalanche Rating | β | 100% Avalanche Tested |
| Technology | β | OptiMOS |
| RoHS Status | β | Compliant (Green Product) |
| Polarity | β | Single N-Channel |