IPD50P04P413ATMA2 vs IPB180P04P4L02ATMA2 Vergleich
Detaillierter Direktvergleich von IPD50P04P413ATMA2 von Infineon und IPB180P04P4L02ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 ✓ AktivSpezifikationsvergleich
| Parameter | IPD50P04P413ATMA2 | IPB180P04P4L02ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,42 | $1,85 |
| Polarity / Device Type | P-Channel MOSFET | — |
| Technology | OptiMOS-P2 (Trench) | — |
| Drain-Source Voltage (VDS) | -40 V | 40 V |
| Continuous Drain Current (TC=25°C, ID) | 50 A | — |
| Continuous Drain Current (TC=100°C, ID) | [DATA_NEEDED: ID @ 100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| Power Dissipation (TC=25°C, Ptot) | 58 W | — |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΩ (typ) / 12.6 mΩ (max) | — |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Maximum Junction Temperature (TJ,max) | 175 °C | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55 C to +175 C (junction) |
| Gehäuse | PG-TO252-3-313 (DPAK) | PG-TO263-7-3 (D2PAK-6, 7-pin) |
| Montageart | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | — |
| MSL-Level | 1 | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS-Status | Compliant | Compliant (per Infineon product page) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-P2 |
| Transistortyp | — | P-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Power Dissipation (PD) at Tc | — | 150 W |
| On-State Resistance RDS(on) max | — | 2.4 mOhm at VGS = -10 V (per Infineon product page) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Pin-Anzahl | — | 7 (6 + tab) |
| Tab Connection | — | Drain |