IPD50P04P413ATMA2 vs IPB180P04P4L02ATMA2 Comparaison
Comparaison détaillée côte à côte de IPD50P04P413ATMA2 par Infineon et IPB180P04P4L02ATMA2 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 ✓ ActifComparaison des spécifications
| Paramètre | IPD50P04P413ATMA2 | IPB180P04P4L02ATMA2 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,42 | $1,85 |
| Polarity / Device Type | P-Channel MOSFET | — |
| Technology | OptiMOS-P2 (Trench) | — |
| Drain-Source Voltage (VDS) | -40 V | 40 V |
| Continuous Drain Current (TC=25°C, ID) | 50 A | — |
| Continuous Drain Current (TC=100°C, ID) | [DATA_NEEDED: ID @ 100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| Power Dissipation (TC=25°C, Ptot) | 58 W | — |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΩ (typ) / 12.6 mΩ (max) | — |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Maximum Junction Temperature (TJ,max) | 175 °C | — |
| Plage de température de fonctionnement | -55 °C to +175 °C | -55 C to +175 C (junction) |
| Boîtier | PG-TO252-3-313 (DPAK) | PG-TO263-7-3 (D2PAK-6, 7-pin) |
| Type de montage | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | — |
| Niveau MSL | 1 | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Statut RoHS | Compliant | Compliant (per Infineon product page) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-P2 |
| Type de transistor | — | P-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Power Dissipation (PD) at Tc | — | 150 W |
| On-State Resistance RDS(on) max | — | 2.4 mOhm at VGS = -10 V (per Infineon product page) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Nombre de broches | — | 7 (6 + tab) |
| Tab Connection | — | Drain |