IPD50P04P413ATMA2 vs IPB180P04P4L02ATMA2 Comparison
Detailed side-by-side comparison of IPD50P04P413ATMA2 by Infineon and IPB180P04P4L02ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 β ActiveSpecification Comparison
| Parameter | IPD50P04P413ATMA2 | IPB180P04P4L02ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $1.85 |
| Polarity / Device Type | P-Channel MOSFET | β |
| Technology | OptiMOS-P2 (Trench) | β |
| Drain-Source Voltage (VDS) | -40 V | 40 V |
| Continuous Drain Current (TC=25Β°C, ID) | 50 A | β |
| Continuous Drain Current (TC=100Β°C, ID) | [DATA_NEEDED: ID @ 100Β°C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | β |
| Power Dissipation (TC=25Β°C, Ptot) | 58 W | β |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΞ© (typ) / 12.6 mΞ© (max) | β |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Maximum Junction Temperature (TJ,max) | 175 Β°C | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55 C to +175 C (junction) |
| Package | PG-TO252-3-313 (DPAK) | PG-TO263-7-3 (D2PAK-6, 7-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | β |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Status | Compliant | Compliant (per Infineon product page) |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS-P2 |
| Transistor Type | β | P-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | β | 180 A |
| Power Dissipation (PD) at Tc | β | 150 W |
| On-State Resistance RDS(on) max | β | 2.4 mOhm at VGS = -10 V (per Infineon product page) |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Pin Count | β | 7 (6 + tab) |
| Tab Connection | β | Drain |