IPD50P04P413ATMA2 vs IPB180P04P4L02ATMA2 对比

详细并排对比 IPD50P04P413ATMA2 出自 Infineon 和 IPB180P04P4L02ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD50P04P413ATMA2 IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2

IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2

IPD50P04P413ATMA2 ✓ 量产中

规格对比

参数 IPD50P04P413ATMA2 IPB180P04P4L02ATMA2
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.42 $1.85
Polarity / Device Type P-Channel MOSFET —
Technology OptiMOS-P2 (Trench) —
Drain-Source Voltage (VDS) -40 V 40 V
Continuous Drain Current (TC=25°C, ID) 50 A —
Continuous Drain Current (TC=100°C, ID) [DATA_NEEDED: ID @ 100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] —
Power Dissipation (TC=25°C, Ptot) 58 W —
On-State Resistance (RDS(on)) @ VGS=-10V 9.2 mΩ (typ) / 12.6 mΩ (max) —
On-State Resistance (RDS(on)) @ VGS=-4.5V [DATA_NEEDED: RDS(on) @ VGS=-4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Gate-Source Voltage (VGS) max ±20 V —
Maximum Junction Temperature (TJ,max) 175 °C —
工作温度范围 -55 °C to +175 °C -55 C to +175 C (junction)
封装 PG-TO252-3-313 (DPAK) PG-TO263-7-3 (D2PAK-6, 7-pin)
安装类型 Surface Mount Surface Mount
Standard Pack Quantity (13" reel) 2500 pcs —
MSL 等级 1 [DATA_NEEDED: MSL rating]
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS 状态 Compliant Compliant (per Infineon product page)
Manufacturer — Infineon Technologies
Series — OptiMOS-P2
晶体管类型 — P-Channel MOSFET
Continuous Drain Current (ID) at Tc — 180 A
Power Dissipation (PD) at Tc — 150 W
On-State Resistance RDS(on) max — 2.4 mOhm at VGS = -10 V (per Infineon product page)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typ/min/max]
引脚数量 — 7 (6 + tab)
Tab Connection — Drain

数据手册与资源

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