IPD60R280P7SAUMA1 vs IPL65R070C7AUMA1 Vergleich

Detaillierter Direktvergleich von IPD60R280P7SAUMA1 von Infineon und IPL65R070C7AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD60R280P7SAUMA1 IPL65R070C7AUMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,48 $1,68
Drain-Source Voltage (VDS) 600 V 650 V
Continuous Drain Current (ID, Tc) 12 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) 280 mΩ (typical) —
Gate-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) 4 V max @ ID = 190 µA [DATA_NEEDED: VGS(th) typical/range]
Total Power Dissipation (Ptot, Tc) 53 W —
Operating Junction Temperature (TJ) -40 °C to +150 °C —
Technology CoolMOS P7 Superjunction (SJ) N-channel Superjunction N-Channel MOSFET
Gehäuse PG-TO252-3 (DPAK) PG-VSON-4 (surface mount)
Montageart Surface Mount Surface Mount
MSL-Level 1 [DATA_NEEDED: MSL rating]
Series CoolMOS P7 (7th generation, 600 V) CoolMOS C7
RoHS-Status Compliant Compliant
Integrated ESD Protection Yes —
Manufacturer — Infineon Technologies
Continuous Drain Current (ID) at TC=25°C — 28 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100°C]
On-Resistance RDS(on) max at VGS=10V — 70 mΩ (typical)
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25°C — 169 W
Avalanche Energy (EAS) — 171 mJ
Betriebs-Sperrschichttemperatur — -55°C to +150°C
Configuration — Single with built-in diode
Channel Type — N-Channel
Lead-Free — Yes

Datenblätter & Ressourcen

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