IPD60R280P7SAUMA1 vs IPL65R070C7AUMA1 Comparison
Detailed side-by-side comparison of IPD60R280P7SAUMA1 by Infineon and IPL65R070C7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD60R280P7SAUMA1 | IPL65R070C7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Drain-Source Voltage (VDS) | 600 V | 650 V |
| Continuous Drain Current (ID, Tc) | 12 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | 280 mΩ (typical) | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V max @ ID = 190 µA | [DATA_NEEDED: VGS(th) typical/range] |
| Total Power Dissipation (Ptot, Tc) | 53 W | — |
| Operating Junction Temperature (TJ) | -40 °C to +150 °C | — |
| Technology | CoolMOS P7 Superjunction (SJ) N-channel | Superjunction N-Channel MOSFET |
| Package | PG-TO252-3 (DPAK) | PG-VSON-4 (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Series | CoolMOS P7 (7th generation, 600 V) | CoolMOS C7 |
| RoHS Status | Compliant | Compliant |
| Integrated ESD Protection | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Continuous Drain Current (ID) at TC=25°C | — | 28 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 70 mΩ (typical) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 169 W |
| Avalanche Energy (EAS) | — | 171 mJ |
| Operating Junction Temperature | — | -55°C to +150°C |
| Configuration | — | Single with built-in diode |
| Channel Type | — | N-Channel |
| Lead-Free | — | Yes |