IPD60R380C6ATMA1 vs IPD65R225C7ATMA1 Vergleich

Detaillierter Direktvergleich von IPD60R380C6ATMA1 von Infineon und IPD65R225C7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD60R380C6ATMA1 IPD65R225C7ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,41 $1,34
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) at TC=25C 10.6 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: typical VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TC=25C 83 W —
Operating Junction Temperature (TJ) -55C to +150C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Technology CoolMOS C6 Superjunction Super-junction (SJ) / CoolMOS
FET Type N-Channel —
Gehäuse PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
RoHS-Status Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain) —
Manufacturer — Infineon Technologies
Series — CoolMOS C7
Transistortyp — N-Channel MOSFET
Drain-Source Voltage (VDSS) — 650 V
Continuous Drain Current (ID) at TC — 11 A
Power Dissipation (PD) at TC — 63 W
On-Resistance RDS(on) max — 225 mΩ
Gate-Source Voltage (VGS) — ±20 V (max)
Betriebstemperaturbereich — -55°C to +150°C
Anzahl der Pins — 3 (2 + tab)
Avalanche Energy Rated — Yes (per datasheet)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern