IPD60R380C6ATMA1 vs IPD65R225C7ATMA1 比較
詳細な並列比較: IPD60R380C6ATMA1 メーカー: Infineon および IPD65R225C7ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD60R380C6ATMA1 | IPD65R225C7ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.41 | $1.34 |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) at TC=25C | 10.6 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | 380 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TC=25C | 83 W | — |
| Operating Junction Temperature (TJ) | -55C to +150C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Technology | CoolMOS C6 Superjunction | Super-junction (SJ) / CoolMOS |
| FET Type | N-Channel | — |
| パッケージ | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| RoHS ステータス | Compliant | Compliant |
| Drain-Tab Connection | Exposed pad (electrically connected to drain) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS C7 |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (VDSS) | — | 650 V |
| Continuous Drain Current (ID) at TC | — | 11 A |
| Power Dissipation (PD) at TC | — | 63 W |
| On-Resistance RDS(on) max | — | 225 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| 動作温度範囲 | — | -55°C to +150°C |
| ピン数 | — | 3 (2 + tab) |
| Avalanche Energy Rated | — | Yes (per datasheet) |