IPD60R380C6ATMA1 vs IPD65R225C7ATMA1 Comparison

Detailed side-by-side comparison of IPD60R380C6ATMA1 by Infineon and IPD65R225C7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R380C6ATMA1 IPD65R225C7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) at TC=25C 10.6 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: typical VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TC=25C 83 W —
Operating Junction Temperature (TJ) -55C to +150C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Technology CoolMOS C6 Superjunction Super-junction (SJ) / CoolMOS
FET Type N-Channel —
Package PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain) —
Manufacturer — Infineon Technologies
Series — CoolMOS C7
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (VDSS) — 650 V
Continuous Drain Current (ID) at TC — 11 A
Power Dissipation (PD) at TC — 63 W
On-Resistance RDS(on) max — 225 mΩ
Gate-Source Voltage (VGS) — ±20 V (max)
Operating Temperature Range — -55°C to +150°C
Number of Pins — 3 (2 + tab)
Avalanche Energy Rated — Yes (per datasheet)

Datasheets & Resources

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