IPD60R385CPATMA1 vs IPD60R145CFD7ATMA1 Vergleich

Detaillierter Direktvergleich von IPD60R385CPATMA1 von Infineon und IPD60R145CFD7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD60R385CPATMA1 IPD60R145CFD7ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,42 $1,05
Manufacturer Infineon Technologies —
Series CoolMOS™ CP (5th generation) CoolMOS CFD7
FET Type N-Channel N-Channel
Drain-Source Voltage (V(BR)DSS) 600 V —
Drain-Source On-Resistance (RDS(on)) 385 mΩ (typ, VGS = 10 V) —
Continuous Drain Current (ID) at TC=25°C 9 A —
Pulsed Drain Current (IDM) 27 A —
Power Dissipation (PD) at TC=25°C 83 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Gate Charge (Qg) 18 nC (typ) —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Betriebs-Sperrschichttemperatur -55 °C to +150 °C —
Gehäuse / Bauform PG-TO252-3 (DPAK) —
Montageart Surface Mount Surface Mount (DPAK, 3-pin + tab)
Pin-Anzahl 3 (Gate, Drain, Source; tab = Drain) 3 (Gate, Drain, Source)
RoHS-Status Compliant Compliant
MSL-Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Technology — CoolMOS CFD7 (superjunction)
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
Gehäuse — TO-252AA (DPAK) surface mount
Body Diode — Integrated fast body diode (low Q<sub>rr</sub>)
Betriebstemperatur — -55C to +150C (junction)
Target Application — ZVS / LLC resonant converters, soft switching

Datenblätter & Ressourcen

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