IPD60R600P6ATMA1 vs IPD80R600P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPD60R600P6ATMA1 von Infineon und IPD80R600P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD60R600P6ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,72 | $0,92 |
| Technology | CoolMOS P6 (superjunction N-channel MOSFET) | CoolMOS P7 super-junction |
| Drain-Source Voltage (Vds) | 600 V | — |
| Continuous Drain Current (Id, Tc) | 7.3 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulse value] | — |
| On-State Resistance Rds(on) | 540 mOhm (typ, per Infineon product page) | — |
| Power Dissipation (Pd, Tc) | 63 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Body Diode Reverse Recovery | Fast recovery (CoolMOS P6 family characteristic) | — |
| Betriebs-Sperrschichttemperatur | -40C to +150C | — |
| Gehäuse | PG-TO252-3 (DPAK) surface mount | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant (per Infineon product page) | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Application Family | PFC stages, hard/soft switching PWM, resonant converters, PC Silverbox, adapter, LCD/PDP TV, lighting, server, telecom, UPS | — |
| Series | CoolMOS P6 industrial grade | — |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| Pulsed Drain Current (IDM) | — | 22 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| Betriebstemperaturbereich | — | -55 C to +150 C |
| Polarity | — | N-Channel |