IPD60R600P6ATMA1 vs IPD80R600P7ATMA1 Comparaison
Comparaison détaillée côte à côte de IPD60R600P6ATMA1 par Infineon et IPD80R600P7ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPD60R600P6ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,72 | $0,92 |
| Technology | CoolMOS P6 (superjunction N-channel MOSFET) | CoolMOS P7 super-junction |
| Drain-Source Voltage (Vds) | 600 V | — |
| Continuous Drain Current (Id, Tc) | 7.3 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulse value] | — |
| On-State Resistance Rds(on) | 540 mOhm (typ, per Infineon product page) | — |
| Power Dissipation (Pd, Tc) | 63 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Body Diode Reverse Recovery | Fast recovery (CoolMOS P6 family characteristic) | — |
| Température de jonction en fonctionnement | -40C to +150C | — |
| Boîtier | PG-TO252-3 (DPAK) surface mount | PG-TO252-3 (DPAK) |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant (per Infineon product page) | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Application Family | PFC stages, hard/soft switching PWM, resonant converters, PC Silverbox, adapter, LCD/PDP TV, lighting, server, telecom, UPS | — |
| Series | CoolMOS P6 industrial grade | — |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| Pulsed Drain Current (IDM) | — | 22 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| Plage de température de fonctionnement | — | -55 C to +150 C |
| Polarity | — | N-Channel |