IPD60R600P6ATMA1 vs IPD80R600P7ATMA1 비교
다음의 상세 나란히 비교: IPD60R600P6ATMA1 제조: Infineon 및 IPD80R600P7ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPD60R600P6ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.72 | $0.92 |
| Technology | CoolMOS P6 (superjunction N-channel MOSFET) | CoolMOS P7 super-junction |
| Drain-Source Voltage (Vds) | 600 V | — |
| Continuous Drain Current (Id, Tc) | 7.3 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulse value] | — |
| On-State Resistance Rds(on) | 540 mOhm (typ, per Infineon product page) | — |
| Power Dissipation (Pd, Tc) | 63 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Body Diode Reverse Recovery | Fast recovery (CoolMOS P6 family characteristic) | — |
| 동작 접합 온도 | -40C to +150C | — |
| 패키지 | PG-TO252-3 (DPAK) surface mount | PG-TO252-3 (DPAK) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant (per Infineon product page) | — |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Application Family | PFC stages, hard/soft switching PWM, resonant converters, PC Silverbox, adapter, LCD/PDP TV, lighting, server, telecom, UPS | — |
| Series | CoolMOS P6 industrial grade | — |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| Pulsed Drain Current (IDM) | — | 22 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| 동작 온도 범위 | — | -55 C to +150 C |
| Polarity | — | N-Channel |