IPD60R600P6ATMA1 vs IPD80R600P7ATMA1 Comparación
Comparación detallada lado a lado de IPD60R600P6ATMA1 por Infineon y IPD80R600P7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD60R600P6ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,72 | $0,92 |
| Technology | CoolMOS P6 (superjunction N-channel MOSFET) | CoolMOS P7 super-junction |
| Drain-Source Voltage (Vds) | 600 V | — |
| Continuous Drain Current (Id, Tc) | 7.3 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulse value] | — |
| On-State Resistance Rds(on) | 540 mOhm (typ, per Infineon product page) | — |
| Power Dissipation (Pd, Tc) | 63 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Body Diode Reverse Recovery | Fast recovery (CoolMOS P6 family characteristic) | — |
| Temperatura de unión de funcionamiento | -40C to +150C | — |
| Encapsulado | PG-TO252-3 (DPAK) surface mount | PG-TO252-3 (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant (per Infineon product page) | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Application Family | PFC stages, hard/soft switching PWM, resonant converters, PC Silverbox, adapter, LCD/PDP TV, lighting, server, telecom, UPS | — |
| Series | CoolMOS P6 industrial grade | — |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| Pulsed Drain Current (IDM) | — | 22 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| Rango de temperatura de funcionamiento | — | -55 C to +150 C |
| Polarity | — | N-Channel |