IPD60R600P6ATMA1 vs IPD80R600P7ATMA1 Comparison
Detailed side-by-side comparison of IPD60R600P6ATMA1 by Infineon and IPD80R600P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD60R600P6ATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.72 | $0.92 |
| Technology | CoolMOS P6 (superjunction N-channel MOSFET) | CoolMOS P7 super-junction |
| Drain-Source Voltage (Vds) | 600 V | β |
| Continuous Drain Current (Id, Tc) | 7.3 A | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulse value] | β |
| On-State Resistance Rds(on) | 540 mOhm (typ, per Infineon product page) | β |
| Power Dissipation (Pd, Tc) | 63 W | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | β |
| Body Diode Reverse Recovery | Fast recovery (CoolMOS P6 family characteristic) | β |
| Operating Junction Temperature | -40C to +150C | β |
| Package | PG-TO252-3 (DPAK) surface mount | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant (per Infineon product page) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Application Family | PFC stages, hard/soft switching PWM, resonant converters, PC Silverbox, adapter, LCD/PDP TV, lighting, server, telecom, UPS | β |
| Series | CoolMOS P6 industrial grade | β |
| Drain-Source Voltage (VDS) | β | 800 V |
| Continuous Drain Current (ID, Tc) | β | 8 A |
| Pulsed Drain Current (IDM) | β | 22 A |
| On-Resistance (RDS(on), max) | β | 600 mΞ© at VGS=10V |
| Maximum Power Dissipation (Ptot) | β | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | β | Β±30 V |
| Avalanche Energy, Single Pulse (EAS) | β | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | β | 0.17 mJ |
| Operating Temperature Range | β | -55 C to +150 C |
| Polarity | β | N-Channel |