IPD70N10S312ATMA2 vs IPD35N10S3L26ATMA2 Vergleich
Detaillierter Direktvergleich von IPD70N10S312ATMA2 von Infineon und IPD35N10S3L26ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD70N10S312ATMA2 - 100V 70A N-Ch OptiMOS Power MOSFET | Infineon
IPD70N10S312ATMA2 ✓ AktivSpezifikationsvergleich
| Parameter | IPD70N10S312ATMA2 | IPD35N10S3L26ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,69 | $1,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD70N10S312ATMA2 | — |
| Technology | OptiMOS-T Power-MOSFET (N-Channel) | Trench MOSFET (OptiMOS-T) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A | 35 A |
| Power Dissipation (Ptot, Tc=25C) | 125 W | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: typical RDS(on) at VGS=10V] | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Betriebstemperaturbereich | -55C to +175C | [DATA_NEEDED: Tj min/max] |
| Gehäuse | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | 3 (Drain, Source, Gate + tab) |
| Channel Type | N-Channel Enhancement Mode | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (unlimited floor life) | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | Yes | — |
| Product Family | — | OptiMOS-T |
| Transistortyp | — | N-Channel MOSFET |
| On-Resistance R<sub>DS(on)</sub> max | — | 24 mOhm |
| Power Dissipation (Ptot, Tc) | — | 71 W |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: gate threshold typical/range] |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free | — | Yes |