IPD70N10S312ATMA2 vs IPD35N10S3L26ATMA2 对比
详细并排对比 IPD70N10S312ATMA2 出自 Infineon 和 IPD35N10S3L26ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD70N10S312ATMA2 | IPD35N10S3L26ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.69 | $1.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD70N10S312ATMA2 | — |
| Technology | OptiMOS-T Power-MOSFET (N-Channel) | Trench MOSFET (OptiMOS-T) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A | 35 A |
| Power Dissipation (Ptot, Tc=25C) | 125 W | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: typical RDS(on) at VGS=10V] | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| 工作温度范围 | -55C to +175C | [DATA_NEEDED: Tj min/max] |
| 封装 | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (Gate, Drain, Source) | 3 (Drain, Source, Gate + tab) |
| Channel Type | N-Channel Enhancement Mode | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (unlimited floor life) | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | Yes | — |
| Product Family | — | OptiMOS-T |
| 晶体管类型 | — | N-Channel MOSFET |
| On-Resistance R<sub>DS(on)</sub> max | — | 24 mOhm |
| Power Dissipation (Ptot, Tc) | — | 71 W |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: gate threshold typical/range] |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free | — | Yes |