IPD80R2K4P7ATMA1 vs IPD80R1K4P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPD80R2K4P7ATMA1 von Infineon und IPD80R1K4P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD80R2K4P7ATMA1 - 800V CoolMOS P7 2.5A N-Channel MOSFET | Infineon
IPD80R2K4P7ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD80R2K4P7ATMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $0,62 |
| Part Number | IPD80R2K4P7ATMA1 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), Superjunction | N-Channel Superjunction |
| Drain-to-Source Voltage (Vdss) | 800 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 2.5 A | — |
| Power Dissipation (Pd) @ Tc=25C | 22 W | — |
| On-Resistance RDS(on) Max @ VGS=10V | 2000 mOhm | — |
| Gate Drive Voltage (typ) | 10 V | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TO252-2 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Pins | 3 (2 + Tab) | — |
| Configuration | Single | — |
| Betriebstemperaturbereich | -55C to +150C (junction) | — |
| Part Status | Active | — |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID) at Tc=25C | — | 4 A |
| On-Resistance (RDS(on)) typ/max | — | 1.2 ohm typ / 1.4 ohm max |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Verlustleistung (Ptot) | — | 32 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| Pin-Anzahl | — | 3 (Gate, Drain/Tab, Source) |
| RoHS-Status | — | Compliant |
| REACH Status | — | Compliant |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | — | Yes |
| Body Diode | — | Integrated, fast recovery |