IPD80R2K4P7ATMA1 vs IPD80R1K4P7ATMA1 Comparison
Detailed side-by-side comparison of IPD80R2K4P7ATMA1 by Infineon and IPD80R1K4P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD80R2K4P7ATMA1 - 800V CoolMOS P7 2.5A N-Channel MOSFET | Infineon
IPD80R2K4P7ATMA1 β Active
Specification Comparison
| Parameter | IPD80R2K4P7ATMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.62 |
| Part Number | IPD80R2K4P7ATMA1 | β |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide), Superjunction | N-Channel Superjunction |
| Drain-to-Source Voltage (Vdss) | 800 V | β |
| Continuous Drain Current (Id) @ Tc=25C | 2.5 A | β |
| Power Dissipation (Pd) @ Tc=25C | 22 W | β |
| On-Resistance RDS(on) Max @ VGS=10V | 2000 mOhm | β |
| Gate Drive Voltage (typ) | 10 V | β |
| Package | PG-TO252-3 (DPAK) | PG-TO252-2 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pins | 3 (2 + Tab) | β |
| Configuration | Single | β |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Part Status | Active | β |
| Drain-Source Voltage (VDS) | β | 800 V |
| Continuous Drain Current (ID) at Tc=25C | β | 4 A |
| On-Resistance (RDS(on)) typ/max | β | 1.2 ohm typ / 1.4 ohm max |
| Gate Threshold Voltage (VGS(th)) | β | 3.5 V (typ) |
| Gate Charge (Qg) typ | β | [DATA_NEEDED: Qg value] |
| Power Dissipation (Ptot) | β | 32 W |
| Operating Junction Temperature | β | -55C to +150C |
| Pin Count | β | 3 (Gate, Drain/Tab, Source) |
| RoHS Status | β | Compliant |
| REACH Status | β | Compliant |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | β | Yes |
| Body Diode | β | Integrated, fast recovery |