IPD80R2K4P7ATMA1 vs IPD80R1K4P7ATMA1 对比
详细并排对比 IPD80R2K4P7ATMA1 出自 Infineon 和 IPD80R1K4P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD80R2K4P7ATMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.05 | $0.62 |
| Part Number | IPD80R2K4P7ATMA1 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), Superjunction | N-Channel Superjunction |
| Drain-to-Source Voltage (Vdss) | 800 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 2.5 A | — |
| Power Dissipation (Pd) @ Tc=25C | 22 W | — |
| On-Resistance RDS(on) Max @ VGS=10V | 2000 mOhm | — |
| Gate Drive Voltage (typ) | 10 V | — |
| 封装 | PG-TO252-3 (DPAK) | PG-TO252-2 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Pins | 3 (2 + Tab) | — |
| Configuration | Single | — |
| 工作温度范围 | -55C to +150C (junction) | — |
| Part Status | Active | — |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID) at Tc=25C | — | 4 A |
| On-Resistance (RDS(on)) typ/max | — | 1.2 ohm typ / 1.4 ohm max |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| 功耗（Ptot） | — | 32 W |
| 工作结温 | — | -55C to +150C |
| 引脚数量 | — | 3 (Gate, Drain/Tab, Source) |
| RoHS 状态 | — | Compliant |
| REACH Status | — | Compliant |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | — | Yes |
| Body Diode | — | Integrated, fast recovery |