IPD80R600P7ATMA1 vs IPD068N10N3GATMA1 Vergleich
Detaillierter Direktvergleich von IPD80R600P7ATMA1 von Infineon und IPD068N10N3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD80R600P7ATMA1 | IPD068N10N3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,92 | $0,65 |
| Drain-Source Voltage (VDS) | 800 V | 100 V |
| Continuous Drain Current (ID, Tc) | 8 A | — |
| Pulsed Drain Current (IDM) | 22 A | — |
| On-Resistance (RDS(on), max) | 600 mΩ at VGS=10V | — |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | — |
| Maximum Gate-Source Voltage (VGS) | ±30 V | — |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | — |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | — |
| Betriebstemperaturbereich | -55 C to +150 C | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK, 2 leads + tab) |
| Montageart | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | OptiMOS 3 (N-Channel, Enhancement Mode) |
| Polarity | N-Channel | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD068N10N3GATMA1 |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| On-Resistance RDS(on) max | — | 6.8 mOhm |
| Power Dissipation (PD) at Tc | — | 150 W |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 4.0 V (typical) |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Channel Type | — | N-Channel |
| Configuration | — | Single |
| RoHS-Status | — | Compliant |
| Packing | — | Tape & Reel (T/R) |
| Qualification | — | Industrial (non-automotive) |