IPD90P04P405ATMA2 vs BSZ018NE2LSATMA1 Vergleich

Detaillierter Direktvergleich von IPD90P04P405ATMA2 von Infineon und BSZ018NE2LSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD90P04P405ATMA2 BSZ018NE2LSATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,69 $0,31
Polarity P-Channel —
Drain-Source Voltage (VDS) -40 V 25 V
Continuous Drain Current (ID, Tc) -90 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD, Tc) 125 W —
On-Resistance RDS(on) at VGS = -10 V 4.7 mΩ (typical) —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Betriebstemperaturbereich -55 °C to +175 °C (Tj) -55C to +150C
Gehäuse PG-TO252-3-313 (DPAK, surface mount) PG-TSDSON-8-FL (8-pin TSDSON with exposed pad)
Montageart Surface Mount Surface Mount
Pin-Anzahl 3 (Gate, Drain, Source) —
Process Technology OptiMOS-P2 (trench + field plate) —
MSL-Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS-Status Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS 25V
Technology — N-Channel Trench MOSFET
Continuous Drain Current (TA) — 23 A
Continuous Drain Current (TC) — 40 A
Power Dissipation (TA) — 2.1 W
Power Dissipation (TC) — 69 W
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) typical at VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Gate Charge Qg — [DATA_NEEDED: total gate charge at VGS=10V]
Lead-Free — Yes
Halogenfrei — Yes

Datenblätter & Ressourcen

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