IPD90P04P405ATMA2 vs IPB120P04P4L03ATMA2 Vergleich
Detaillierter Direktvergleich von IPD90P04P405ATMA2 von Infineon und IPB120P04P4L03ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ AktivSpezifikationsvergleich
| Parameter | IPD90P04P405ATMA2 | IPB120P04P4L03ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,69 | $1,74 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -40 V | 40 V |
| Continuous Drain Current (ID, Tc) | -90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-Resistance RDS(on) at VGS = -10 V | 4.7 mΩ (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (Tj) | — |
| Gehäuse | PG-TO252-3-313 (DPAK, surface mount) | PG-TO263-3-2 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Process Technology | OptiMOS-P2 (trench + field plate) | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| RoHS-Status | Compliant | Compliant (per Infineon product page) |
| Transistor Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 120 A |
| Power Dissipation (PD, Tc=25C) | — | 136 W |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |