IPD90P04P405ATMA2 vs IPB120P04P4L03ATMA2 Comparison
Detailed side-by-side comparison of IPD90P04P405ATMA2 by Infineon and IPB120P04P4L03ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ ActiveSpecification Comparison
| Parameter | IPD90P04P405ATMA2 | IPB120P04P4L03ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -40 V | 40 V |
| Continuous Drain Current (ID, Tc) | -90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-Resistance RDS(on) at VGS = -10 V | 4.7 mΩ (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Operating Temperature Range | -55 °C to +175 °C (Tj) | — |
| Package | PG-TO252-3-313 (DPAK, surface mount) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Process Technology | OptiMOS-P2 (trench + field plate) | — |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant (per Infineon product page) |
| Transistor Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 120 A |
| Power Dissipation (PD, Tc=25C) | — | 136 W |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Operating Junction Temperature | — | -55C to +175C |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |