IPG20N04S408ATMA1 vs IPG20N06S2L65ATMA1 Vergleich
Detaillierter Direktvergleich von IPG20N04S408ATMA1 von Infineon und IPG20N06S2L65ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPG20N04S408ATMA1 | IPG20N06S2L65ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $1,05 |
| FET Type | Dual N-Channel | Dual N-Channel, Logic Level |
| Technology | OptiMOS (trench MOSFET) | OptiMOS-T2 (Planar Trench 55V) |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, per channel) | 20 A at 25 degC case | — |
| R_DS(on) max @ V_GS=10V | 7.6 mOhm | — |
| Maximum Power Dissipation (P_D) | 65 W | — |
| Betriebs-Sperrschichttemperatur | -55 degC to +175 degC | — |
| Gehäuse | PG-TDSON-8-4 (SuperSO8 dual) | PG-TDSON-8-4 (TDSON-8 EP) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (260 degC peak reflow) | MSL1 (260°C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| RoHS-Status | Compliant (Green Product) | — |
| Avalanche Rated | 100 percent tested | — |
| Channel Count | 2 (independent) | — |
| Operating Mode | Enhancement mode, Normal Level | — |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 20 A per channel |
| RDS(on) at VGS=10V | — | 65 mΩ typical |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic level) |
| Total Power Dissipation (Ptot) | — | 43 W |
| Betriebstemperaturbereich | — | -55°C to +175°C |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Qualified |
| RoHS Compliance | — | RoHS Compliant (Green Product) |
| Packaging | — | Tape & Reel (TMA1 suffix) |