IPG20N04S408ATMA1 vs IPG20N06S2L65ATMA1 Comparison

Detailed side-by-side comparison of IPG20N04S408ATMA1 by Infineon and IPG20N06S2L65ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N04S408ATMA1

IPG20N04S408ATMA1 - Dual N-Ch 40V 20A 7.6mOhm OptiMOS | Infineon

IPG20N04S408ATMA1 βœ“ Active
Infineon
IPG20N06S2L65ATMA1

IPG20N06S2L65ATMA1 - Dual N-Ch 55V 20A MOSFET | Infineon

IPG20N06S2L65ATMA1 βœ“ Active

Specification Comparison

Parameter IPG20N04S408ATMA1 IPG20N06S2L65ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $1.05
FET Type Dual N-Channel Dual N-Channel, Logic Level
Technology OptiMOS (trench MOSFET) OptiMOS-T2 (Planar Trench 55V)
Drain-Source Voltage (V_DSS) 40 V β€”
Continuous Drain Current (I_D, per channel) 20 A at 25 degC case β€”
R_DS(on) max @ V_GS=10V 7.6 mOhm β€”
Maximum Power Dissipation (P_D) 65 W β€”
Operating Junction Temperature -55 degC to +175 degC β€”
Package PG-TDSON-8-4 (SuperSO8 dual) PG-TDSON-8-4 (TDSON-8 EP)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (260 degC peak reflow) MSL1 (260Β°C peak reflow)
AEC-Q101 Qualified Yes β€”
RoHS Status Compliant (Green Product) β€”
Avalanche Rated 100 percent tested β€”
Channel Count 2 (independent) β€”
Operating Mode Enhancement mode, Normal Level β€”
Drain-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) β€” 20 A per channel
RDS(on) at VGS=10V β€” 65 mΞ© typical
Gate Threshold Voltage (VGS(th)) β€” 1.0 V to 2.5 V (logic level)
Total Power Dissipation (Ptot) β€” 43 W
Operating Temperature Range β€” -55Β°C to +175Β°C
Avalanche Rating β€” 100% Avalanche Tested
Automotive Qualification β€” AEC-Q101 Qualified
RoHS Compliance β€” RoHS Compliant (Green Product)
Packaging β€” Tape & Reel (TMA1 suffix)

Datasheets & Resources

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