IPG20N04S4L08ATMA1 vs IAUCN04S7N012ATMA1 Vergleich
Detaillierter Direktvergleich von IPG20N04S4L08ATMA1 von Infineon und IAUCN04S7N012ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPG20N04S4L08ATMA1 - Dual N-Ch 40V 20A 8.2mΩ OptiMOS-T2 | Infineon
IPG20N04S4L08ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPG20N04S4L08ATMA1 | IAUCN04S7N012ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,89 | $1,18 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPG20N04S4L08ATMA1 | — |
| FET Type | 2 N-Channel (Dual) | — |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ 25°C | 20 A | — |
| On-Resistance Rds(on) max @ Vgs=10V, Id=17A | 8.2 mΩ | — |
| Power Dissipation (Pd) | 54 W | — |
| Betriebstemperatur | -55°C to +175°C | — |
| Gehäuse / Bauform | PG-TDSON-8-4 (TDSON-8) | — |
| Montageart | Surface Mount | Surface Mount |
| Series | OptiMOS™-T2, Automotive, AEC-Q101 | — |
| MSL-Level | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) | 1 |
| Avalanche Tested | 100% Avalanche Tested | — |
| RoHS / Green | RoHS Compliant, Green Product | — |
| Part Status | Active | — |
| Transistortyp | — | N-Channel MOSFET |
| Technology | — | OptiMOS-7 (trench) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 1.2 mΩ |
| On-State Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Betriebstemperaturbereich | — | -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] |
| Gehäuse | — | PG-TDSON-8-34 (8-PowerTDFN) |
| Transistor Grade | — | Automotive (AEC-Q101) |
| Verlustleistung (Ptot) | — | [DATA_NEEDED: Ptot at TC=25°C] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: RθJA on JEDEC PCB] |
| RoHS-Status | — | Compliant |
| Halogenfrei | — | Yes |
| Polarity | — | N-Channel |