IPG20N04S4L08ATMA1 vs IAUCN04S7N012ATMA1 对比

详细并排对比 IPG20N04S4L08ATMA1 出自 Infineon 和 IAUCN04S7N012ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7N012ATMA1 IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon

IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon

IAUCN04S7N012ATMA1 ✓ 量产中

规格对比

参数 IPG20N04S4L08ATMA1 IAUCN04S7N012ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.89 $1.18
Manufacturer Infineon Technologies —
Part Number IPG20N04S4L08ATMA1 —
FET Type 2 N-Channel (Dual) —
FET Feature Logic Level Gate —
Drain-to-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ 25°C 20 A —
On-Resistance Rds(on) max @ Vgs=10V, Id=17A 8.2 mΩ —
Power Dissipation (Pd) 54 W —
工作温度 -55°C to +175°C —
封装 / 外壳 PG-TDSON-8-4 (TDSON-8) —
安装类型 Surface Mount Surface Mount
Series OptiMOS™-T2, Automotive, AEC-Q101 —
MSL 等级 MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) 1
Avalanche Tested 100% Avalanche Tested —
RoHS / Green RoHS Compliant, Green Product —
Part Status Active —
晶体管类型 — N-Channel MOSFET
Technology — OptiMOS-7 (trench)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25°C — 120 A
On-State Resistance RDS(on) max at VGS=10V — 1.2 mΩ
On-State Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
工作温度范围 — -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet]
封装 — PG-TDSON-8-34 (8-PowerTDFN)
Transistor Grade — Automotive (AEC-Q101)
功耗(Ptot) — [DATA_NEEDED: Ptot at TC=25°C]
Thermal Resistance RθJA — [DATA_NEEDED: RθJA on JEDEC PCB]
RoHS 状态 — Compliant
无卤 — Yes
Polarity — N-Channel

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