IPG20N04S4L08ATMA1 vs IAUCN04S7N012ATMA1 Comparación
Comparación detallada lado a lado de IPG20N04S4L08ATMA1 por Infineon y IAUCN04S7N012ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPG20N04S4L08ATMA1 - Dual N-Ch 40V 20A 8.2mΩ OptiMOS-T2 | Infineon
IPG20N04S4L08ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPG20N04S4L08ATMA1 | IAUCN04S7N012ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,89 | $1,18 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPG20N04S4L08ATMA1 | — |
| FET Type | 2 N-Channel (Dual) | — |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ 25°C | 20 A | — |
| On-Resistance Rds(on) max @ Vgs=10V, Id=17A | 8.2 mΩ | — |
| Power Dissipation (Pd) | 54 W | — |
| Temperatura de funcionamiento | -55°C to +175°C | — |
| Encapsulado / Carcasa | PG-TDSON-8-4 (TDSON-8) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Series | OptiMOS™-T2, Automotive, AEC-Q101 | — |
| Nivel MSL | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) | 1 |
| Avalanche Tested | 100% Avalanche Tested | — |
| RoHS / Green | RoHS Compliant, Green Product | — |
| Part Status | Active | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS-7 (trench) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 1.2 mΩ |
| On-State Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] |
| Encapsulado | — | PG-TDSON-8-34 (8-PowerTDFN) |
| Transistor Grade | — | Automotive (AEC-Q101) |
| Disipación de potencia (Ptot) | — | [DATA_NEEDED: Ptot at TC=25°C] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: RθJA on JEDEC PCB] |
| Estado RoHS | — | Compliant |
| Sin halógenos | — | Yes |
| Polarity | — | N-Channel |