IPL65R200CFD7AUMA1 vs IPL60R105P7AUMA1 Vergleich
Detaillierter Direktvergleich von IPL65R200CFD7AUMA1 von Infineon und IPL60R105P7AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPL65R200CFD7AUMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,52 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS CFD7 | CoolMOS P7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 650 V | 600 V |
| Continuous Drain Current (ID, Tc) | 14 A | — |
| Power Dissipation (PD, Tc) | 81 W | — |
| On-Resistance (RDS(on)) | 0.2 ohm at VGS=10V, ID=5.2A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| Technology | CoolMOS Superjunction (SJ) | Superjunction (SJ) N-Channel Power MOSFET |
| Gehäuse | PG-VSON-4 | PG-VSON-4 (4-pin SMD with exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +150C (TJ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | — |
| Body Diode | Fast-recovery intrinsic | — |
| Gate-Source ESD Protection | Yes (integrated) | — |
| RoHS-Status | Compliant | Compliant |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Betriebstemperaturbereich | — | -55C to +150C |
| Channel Type | — | N-Channel |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| Halogenfrei | — | Yes |
| Lead-Free | — | Yes |