IPL65R200CFD7AUMA1 vs IPL60R105P7AUMA1 Comparison

Detailed side-by-side comparison of IPL65R200CFD7AUMA1 by Infineon and IPL60R105P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPL65R200CFD7AUMA1

IPL65R200CFD7AUMA1 - 650V 14A CoolMOS CFD7 MOSFET | Infineon

IPL65R200CFD7AUMA1 βœ“ Active
Infineon
IPL60R105P7AUMA1

IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΞ© N-Channel MOSFET | Infineon

IPL60R105P7AUMA1 βœ“ Active

Specification Comparison

Parameter IPL65R200CFD7AUMA1 IPL60R105P7AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.52 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS CFD7 CoolMOS P7
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 650 V 600 V
Continuous Drain Current (ID, Tc) 14 A β€”
Power Dissipation (PD, Tc) 81 W β€”
On-Resistance (RDS(on)) 0.2 ohm at VGS=10V, ID=5.2A β€”
Gate Threshold Voltage (VGS(th)) 3.5 V β€”
Technology CoolMOS Superjunction (SJ) Superjunction (SJ) N-Channel Power MOSFET
Package PG-VSON-4 PG-VSON-4 (4-pin SMD with exposed pad)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C (TJ) β€”
Gate Charge (Qg) [DATA_NEEDED: typical Qg value] β€”
Body Diode Fast-recovery intrinsic β€”
Gate-Source ESD Protection Yes (integrated) β€”
RoHS Status Compliant Compliant
On-Resistance (RDS(on)) max β€” 105 mΞ©
Continuous Drain Current (ID) at Tc β€” 33 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc β€” 137 W
Gate Threshold Voltage (VGS(th)) typ β€” 3.5 V
Gate Charge (Qg) typ β€” 45 nC
Operating Temperature Range β€” -55C to +150C
Channel Type β€” N-Channel
MSL Level β€” [DATA_NEEDED: MSL rating]
Halogen-Free β€” Yes
Lead-Free β€” Yes

Datasheets & Resources

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