IPP022N12NM6AKSA1 vs IRFB4110PBF Vergleich
Detaillierter Direktvergleich von IPP022N12NM6AKSA1 von Infineon und IRFB4110PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPP022N12NM6AKSA1 | IRFB4110PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,04 | $1,55 |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | HEXFET (planar DMOS) |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Continuous Drain Current (ID) at TA=25°C | 29 A | — |
| Pulsed Drain Current (IDM) at TC=25°C | 203 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max | 2.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Power Dissipation (PD) at TC=25°C | 395 W | 370 W |
| Betriebstemperaturbereich | -55°C to +175°C | — |
| Gehäuse | PG-TO220-3-1 (TO-220 through-hole) | TO-220AB (through-hole) |
| Montageart | Through Hole | Through Hole |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| RoHS-Status | Compliant | Compliant (Pb-free suffix) |
| Manufacturer | Infineon Technologies | — |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-Resistance RDS(on) max at VGS=10V | — | 4.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Lead-Free | — | Yes (PBF suffix denotes Pb-free) |