IPP022N12NM6AKSA1 vs IRFB4110PBF Comparison
Detailed side-by-side comparison of IPP022N12NM6AKSA1 by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPP022N12NM6AKSA1 | IRFB4110PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.04 | $1.55 |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | HEXFET (planar DMOS) |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Continuous Drain Current (ID) at TA=25°C | 29 A | — |
| Pulsed Drain Current (IDM) at TC=25°C | 203 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max | 2.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Power Dissipation (PD) at TC=25°C | 395 W | 370 W |
| Operating Temperature Range | -55°C to +175°C | — |
| Package | PG-TO220-3-1 (TO-220 through-hole) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) | — |
| RoHS Status | Compliant | Compliant (Pb-free suffix) |
| Manufacturer | Infineon Technologies | — |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-Resistance RDS(on) max at VGS=10V | — | 4.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Operating Junction Temperature | — | -55 °C to +175 °C |
| Lead-Free | — | Yes (PBF suffix denotes Pb-free) |