IPP022N12NM6AKSA1 vs IRFB4110PBF 对比
详细并排对比 IPP022N12NM6AKSA1 出自 Infineon 和 IRFB4110PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPP022N12NM6AKSA1 | IRFB4110PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.04 | $1.55 |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | HEXFET (planar DMOS) |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Continuous Drain Current (ID) at TA=25°C | 29 A | — |
| Pulsed Drain Current (IDM) at TC=25°C | 203 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max | 2.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Power Dissipation (PD) at TC=25°C | 395 W | 370 W |
| 工作温度范围 | -55°C to +175°C | — |
| 封装 | PG-TO220-3-1 (TO-220 through-hole) | TO-220AB (through-hole) |
| 安装类型 | Through Hole | Through Hole |
| 引脚数量 | 3 (Gate, Drain, Source) | — |
| RoHS 状态 | Compliant | Compliant (Pb-free suffix) |
| Manufacturer | Infineon Technologies | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-Resistance RDS(on) max at VGS=10V | — | 4.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| 工作结温 | — | -55 °C to +175 °C |
| Lead-Free | — | Yes (PBF suffix denotes Pb-free) |